1/5 rev. c structure silicon monolithic integrated circuit product name dc/dc converter ic for camera module for car navigation system model name b d 8 6 7 4 k n package outline fig. - 1 block diagram fig. - 2 features ? +3.3v output step down dc/dc converter for synchronous rectification system ? double booster charger pump ? +5v output ldo ? soft start function ? building in low voltage and over voltage protection function ? building in terminal rt open/short protection ? the frequency can be set by external resistance ? concentrated protection control with built-in sequencer ? building in external reset output function ? vqfn-28 package absolute maximum rating: ta = 25 parameter symbol limits unit vin supply voltage vin 18v v pvin supply voltage pvin vin v power dissipation pd 0.725 * w operating temperature topr -40 +85 storage temperature tstg -55 +150 * 70mm70mm, thickness1.6mm, less than 3% share of copper foil when implementing glass epoxy board. operating at higher than ta=25 , 5.8mw shall be reduced per 1 operation condition (please set the power-supply voltage in consideration of a power dissipation.) parameter symbol min typ max unit vin supply voltage vin 4.5 6.0 9.0 v this product is not designed for protection against radioactive rays.
2/5 rev. c electrical characteristics (unless otherwise noted ta=25 , vin=6.0v,pvin=6.0v,v33in=3.3v,v66in=6.6v,gnd=0v) parameter symbol specification value unit condition min typ max vin,pvin circuit current 1 i q1 - \ 50 a en1,2=0v vin,pvin circuit current 2 i q 2 - 15 - ma en1,2=vin 3.3v output voltage v 03 3 3.234 3.300 3.366 v terminal v33 input bias current i v3 3 b - 14 - a v v33 =3.3v terminal v33 discharge resistance r v33dis - 325 - ? terminal fc33 clamping voltage h v fc3 3 h 1.2 - - v v v33 =2.9v terminal fc33 clamping voltage l v fc3 3 l - - 0.2 v v v33 =3.7v terminal fc33 sink current i fc3 3 sink 0.5 - - ma v v33 =3.7v v fc33 =0.4v terminal fc33 source current i fc3 3 sourc e - - -14 a v v33 =2.9v v fc33 =1.4v range of oscillation frequency setting f os c 500 - 1200 khz terminal ss charging current i ss3 3 -4.0 -2.5 -1.0 a v ss33 =1.0v terminal ss threshold voltage v ss33t h 1.0 1.1 1.2 v v ss33 voltage v v33 =0.8v terminal ss clamping voltage v ss 3 3clm 1.6 1.9 2.2 v terminal ss standby voltage v ss33stb 0.11 0.15 0.19 v v ss33 voltage (l h) terminal ss standby voltage maximum hysteresis error v ss33stb _ hys 5 50 100 mv terminal ss discharge resistance r ss33dis 49 70 91 k ? terminal ss protection circuit start voltage v ss33po n 1.0 1.1 1.2 v v ss33 voltage (l h) terminal ss protection circuit start voltage maximum hysteresis error v ss33pon_hys 10 100 200 mv v ss33 voltage terminal v33 low voltage detection voltage v v33lv p 1.11 1.32 1.53 v v v33 voltage (h l) terminal v33 low voltage detection maximum hysteresis error v v33lvp_hys 41.2 412 824 mv v v33 voltage terminal v33 overvoltage detection voltage v v33ov p 4.45 4.95 5.45 v v v33 voltage < charge pump and 5v output ldo part > terminal v33in inflow current v v33i n - 4 - ma v v33in =3.3v frequency of charge pump sw f cp _ os c - 640 - khz terminal v5 output voltage v v 5 4.900 5.000 5.100 v line regulation v v5line - - 50 mv 6v 7v load regulation v v5loa d - - 50 mv 1ma 20ma terminal v66 standby voltage v v 6 6stb 4.5 5.0 5.5 v v v66 voltage(l h) terminal v66 overvoltage detection voltage v v66ov p 8.91 9.9 10.89 v v v66 voltage terminal v5 protection circuit start voltage v v5po n 3.6 4.0 4.4 v v v5 voltage terminal v5 low voltage detection voltage v v5lv p 1.68 2.0 2.32 v v v5 voltage (h l) terminal v5 low voltage detection maximum hysteresis error v v5lvp_hys 62.5 313 1250 mv v v5 voltage terminal v5 overvoltage detection voltage v v5ov p 6.75 7.5 8.25 v v v5 voltage < reset part > terminal v33 reset detection voltage v rst o 2.723 2.750 2.776 v v v33 voltage (h l) terminal rstdly sresshold voltage v rstdlyt h 0.8 0.9 1.0 v v v33 =3.3v terminal reset low output voltage v ol _ rst - - 0.5 v i ol =4ma < other > terminal en input voltage high level voltage v ih _ e n 2.0 - vin v terminal en1,2 terminal en input voltage low level voltage v il_e n - - 0.5 v terminal en1,2 terminal en input current i i _ e n - 36 54 a terminal en1,2 en=vin v v33 v33 voltage v fc33 fc33 voltage v ss33 ss voltage v v66in v66in voltage v v5 v5 voltage v v33in v33in voltage this product is not designed for protection against radioactive rays. the current ability must not exceed pd.
3/5 rev. c pin assignment no. symbol description no. symbol description 1 fb5 5v output voltage detection terminal 15 gnd gnd(0v connection) 2 v5 5v regulator output terminal 16 ss33 3.3v so ft start adjustment capacity connection terminal 3 v66in ldo6.6v voltage input terminal 17 rt frequency adjustment resistance connection terminal 4 v66 charge pump voltage output terminal 18 rstdly reset delay adjustment capacity connection terminal 5 cp capacity connection terminal for charge pump ( ) 19 rsto reset output terminal 6 cm capacity connection terminal for charge pump ( ) 20 vin power supply input terminal 7 v33in charge pump 3.3v input voltage terminal 21 test4 test terminal 4 8 pgnd power gnd (the same potential as terminal gnd) 22 test3 test terminal 3 9 sw coil connection terminal 23 test2 test terminal 2 10 pvin power supply input terminal for powertr (=vin) 24 gnd gnd(0v connection) 11 test5 test terminal 5 25 en2 5v output control terminal 12 v33 3.3v output voltage detection terminal 26 en 3.3v output control terminal 13 fb33 error amplifier input terminal 27 ss5 5v soft start adjustment capacity connection terminal 14 fc33 error amplifier output terminal 28 test1 test terminal 1 package outline package outline ?fig.1 vqfn-2 8 (unit:mm) bd8674 lot.no product name 1pin mark
4/5 rev. c block diagram block diagram and recommended external parts constant ?fig.2 test1,2,3,4 terminal should be connected. pvin and vin terminal shoul d be connected each other. phase compensation circuit of s witching regulator is in clunde d on this ic. but if switchi ng regulator is used with unrecommeded external parts or under unrecommeded condition, external phase compensation is needed. 33 vin p 5 33 33 test5 charge pump test1 test2 test3 test4 en1 en2 rsto rstdly pre dri ve fc33 v66 fb5 15,24 fb33 v66in ss5 10uh 10uf 1uf 0.47uf 0.1uf 27k 6800pf 5v 30ma 3.3v 250ma 4.5v-9v 10uf 10uf 1000pf
5/5 rev. c note on use 1 about the absolute maximum rating attention is brushed off enough to the quality control, it is li kely to destroy when the absolute maximum rating such as impres sed voltages (vcc_in,dcin) and ranges (topr) of the operating temperature as it is exceeded, the mode of breakings of the short or the opening, etc. cannot be specified, and examine it in this ic to give physical measures for safety such as fuses when a s pecial mode that exceeds the absolut e maximum rating is assumed. 2 about the reverse-connection of the power supply connector ic might destroy it by reversely connecting the power supply con nector. give measures such as putting the diode between power s upply terminals of power supply and ic outside for the revers e-touching destruction protection. 3 power supply line please do measures such as putting the bypa ss capacitor in power supply-gnd nearest pin of this ic as the route of the resurrec tion current to cause the return of the current in which it resurrected it by the counter electromotive force of the coil. please confirm the characteristic of the el ectrolytic capacitor enough as the capacity omission etc. at the low temperature nev er happen, and decide it. 4 about grand potential any state of operation must become the lowest potential about the potential of the terminal gnd. moreover, confirm whether ther e is terminal that is actually the voltage of gnd or less including transients. 5 about the heat design think about permissible loss (pd) in an actual state of use, and do the heat design with the margin enough. 6 about the short and the miss-installation between terminals note the direction and the miss-registration of ic enough when you install it in the set substrate. ic might destroy it as well as reversely connecting the power supply connector when installing it by mistake. moreover, there is fear of destruction when the foreign body enters between ter minals, the terminal, the power supply, and grandeur and it is short-circuited. 7 about operation in strong electromagnetic field in use in strong electromagnetic field, note that there is a possibility of malfunctioning. 8 about the capacitor during output-gnd the current charged the capacitor with when vcc is 0v or is g nd and is short-circuited when a bi g capacitor is connected betwee n gnd output by some factors flows into the output and it is likely to destroy it. give the capacitor between gnd output to 0.1 f or less. 9 about the inspection by the set substrate it is likely to suffer stress to ic and discharge electricity every one process when you connect the capacitor with the pin wit h low impedance when inspecting it in the set substrate. moreover, detach it af ter connecting after the power supply is tu rned off without fail when detaching it to g in the inspection process, inspecting, and turning off the power supply. n addition, be give the earth to the assembly process as a static electricity mea sures, and careful enough when it transports and you preserve it. 10 about each input terminal this ic is a monolithic ic which has a p + isolations and p substrate to isolate elements each other. this p layer and an n layer in each element form a pn junction to construct vari ous parasitic elements. for instance, the potential difference operates in resistance as shown in the figure below when resistance and the transistor c onnect it with the terminal and the playground (gnd) >(terminal b) joint of pn operates as a parasi tic diode in playground (gnd) >(terminal a) transistor (npn). in addition, the npn transistor of parasitism works with n layer of the element of the above- mentioned parasitic diode and the neighborhood and others in transist or (npn). a parasitic element in ic composition is inevitably form ed because of the potential relation. a parasitic element can operate, the interference with the circui t operation be caused, it malfunction, and, consequently, it c ause destruction. therefore, do not do the usage that a parasitic element operates as a voltage that is lower than the playground (gnd;p substrate) is impressed to the input terminal enough. moreover, do not impress the voltage to the input terminal when you do not impress the power-supply voltage to ic. give each in put terminal to me the voltage below the power-supply voltage or in the guarantee value of an el ectric characteristic when you similarly impress the power-sup ply voltage. example of ic of simple structure 11 earth wiring pattern if small signal gnd and large current gnd exist, disperse thei r pattern. in addition, for voltage change by pattern wiring impe dance and large current not to change voltage of small signal gnd, each ground terminal of ic mu st be connected at the one point on the set circuit board. as for gnd of external parts, it is similar to the above-mentioned. 12 thermal shut-down when a thermal shutdown operates, the dc/dc converter controller of all ch is turned off. when a thermal shutdown is released, the dc/dc converter controller of all ch becomes an oper ation beginning from turning off. 13. bypass capacitor of power supply when pvin, vin voltages go down as eni=high in the state of high impedance with a capacitor in the large effect of the dielectric substance absorption such as the aluminum electric fiel d capacitor installed in pvin and vin; pvin, vin voltages go up by dielectric substance ab sorption again, and v33 output voltage goes up.
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